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Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's.

, , , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 10 (10): 1276-1286 (1991)

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MOS2: an efficient MOnte Carlo Simulator for MOS devices., , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 7 (2): 259-271 (1988)A numerical method to compute isotropic band models from anisotropic semiconductor band structures., , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 12 (9): 1327-1336 (1993)A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs., , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 8 (4): 360-369 (1989)Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's., , , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 10 (10): 1276-1286 (1991)