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Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations., , , , , , , , , and 2 other author(s). Math. Comput. Simul., 79 (4): 1096-1106 (2008)Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100 nm SOC Circuit Design., , , , , , and . IEICE Trans. Electron., 94-C (3): 361-367 (2011)A GIDL-Current Model for Advanced MOSFET Technologies without Binning., , , , and . IPSJ Trans. Syst. LSI Des. Methodol., (2009)Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation., , , , , , , , , and 1 other author(s). IEICE Trans. Electron., 92-C (5): 608-615 (2009)Measurement-Based Ring Oscillator Variation Analysis., , , , , and . IEEE Des. Test Comput., 27 (5): 6-13 (2010)Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization., , , , , and . IEICE Trans. Electron., 91-C (8): 1379-1381 (2008)Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors., , , , , , , , , and . IEICE Trans. Electron., 92-C (6): 777-784 (2009)A PN Junction-Current Model for Advanced MOSFET Technologies., , , and . IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 92-A (4): 983-989 (2009)