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Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.

J. Sun, K. Zhong, Z. Zheng, G. Lyu, and K. Chen. IEEE Trans. Ind. Electron., 69 (7): 7340-7348 (2022)

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Siwei Lyu

Yong-Sang Lyu

Anatoliy Lyubar

Lyudmila Slaveykova Lyubenova

Other publications of authors with the same name

High power IGCT compact model with impact ionization effect.G. Lyu, W. Zhou, J. Liu, and R. Zeng. IECON, page 1215-1219. IEEE, (2017)Automatic selection of lexical features for detecting Alzheimer's disease using bag-of-words model and genetic algorithm.G. Lyu, and A. Dong. Int. J. Comput. Appl. Technol., 61 (4): 306-311 (2019)Precise Measurement Methodology of nH-Level Gate Electrode Inductance Based on Calculation-Error-Free Algorithm for Unity-Gain Turn-Off Devices.J. Liu, B. Zhao, W. Zhou, G. Lyu, Z. Chen, C. Xu, Z. Yu, and R. Zeng. IEEE Trans. Ind. Electron., 68 (8): 6818-6827 (2021)A Review of Alzheimer's Disease Classification Using Neuropsychological Data and Machine Learning.G. Lyu. CISP-BMEI, page 1-5. IEEE, (2018)Characterization of Static and Dynamic Behavior of 1200 V Normally off GaN/SiC Cascode Devices.Y. Wang, G. Lyu, J. Wei, Z. Zheng, J. He, J. Lei, and K. Chen. IEEE Trans. Ind. Electron., 67 (12): 10284-10294 (2020)Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.J. Sun, K. Zhong, Z. Zheng, G. Lyu, and K. Chen. IEEE Trans. Ind. Electron., 69 (7): 7340-7348 (2022)650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications.K. Zhong, Y. Wang, G. Lyu, J. Wei, J. Sun, and K. Chen. IEEE Trans. Ind. Electron., 69 (9): 8997-9006 (2022)Learning-based extraction of first-order logic representations of API directives.M. Liu, X. Peng, A. Marcus, C. Treude, X. Bai, G. Lyu, J. Xie, and X. Zhang. ESEC/SIGSOFT FSE, page 491-502. ACM, (2021)Analysis and Experiments for IGBT, IEGT, and IGCT in Hybrid DC Circuit Breaker.Z. Chen, Z. Yu, X. Zhang, T. Wei, G. Lyu, L. Qu, Y. Huang, and R. Zeng. IEEE Trans. Ind. Electron., 65 (4): 2883-2892 (2018)Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device.G. Lyu, J. Sun, Y. Wang, and K. Chen. IEEE Trans. Ind. Electron., 69 (12): 12773-12783 (2022)

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Disambiguation of "Lyu, Gang"

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Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.

Please choose a person to relate this publication to

Siwei Lyu

Siwei Lyu

Yong-Sang Lyu

Anatoliy Lyubar

Lyudmila Slaveykova Lyubenova

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Lyu, Gang"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.

Please choose a person to relate this publication to

Siwei Lyu

Siwei Lyu

Yong-Sang Lyu

Anatoliy Lyubar

Lyudmila Slaveykova Lyubenova

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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MSOffice XML

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs.