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Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devices

P. Harrison, L. Eaves, P. Martin, M. Henini, P. Buckle, M. Skolnick, D. Whittaker, and G. Hill. Surf.~Sci., (1994)

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M S Perzanowski

M S Khan

M S Jenny

Rahul M S

Osman M s rl

Other publications of authors with the same name

Electric-field-dependent capture and escape in self-assembled InAs/GaAs quantum dotsP. Fry, J. Finley, L. Wilson, A. Lemaitre, D. Mowbray, M. Skolnick, M. Hopkinson, G. Hill, and J. Clark. Appl.~Phys.~Lett., (2000)Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots.A. Monte, J. Finley, D. Whittaker, I. Itskevitch, D. Mowbray, M. Skolnick, F. de Sales, and M. Hopkins. Microelectron. J., 34 (5-8): 667-669 (2003)Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasersP. Fry, L. Harris, S. Parnell, J. Finley, A. Ashmore, D. Mowbray, M. Skolnick, M. Hopkinson, G. Hill, and J. Clark. J.~Appl.~Phys., (2000)Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devicesP. Harrison, L. Eaves, P. Martin, M. Henini, P. Buckle, M. Skolnick, D. Whittaker, and G. Hill. Surf.~Sci., (1994)Shape analysis of single and stacked InAs quantum dots at the atomic level by cross-sectional STMD. Bruls, J. Vugs, P. Koenraad, M. Skolnick, M. Hopkinson, and J. Wolter. Proceedings of the 25th International Conference on the Physics of Semiconductors, page 359. Berlin, Springer, (2001)GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substratesA. Alyamani, D. Sanvitto, A. Khalifa, M. Skolnick, T. Wang, F. Ranalli, P. Parbrook, A. Tahraoui, and R. Airey. Journal of Applied Physics, 101 (9): 093110 (2007)The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface.J. Lin, P. Fry, R. Hogg, M. Hopkinson, I. Ross, A. Cullis, R. Kolodka, A. Tartakovskii, and M. Skolnick. Microelectron. J., 37 (12): 1505-1510 (2006)Time-resolved measurements and spatial photoluminescence distribution in InAs/AlGaAs quantum dots.A. Monte, F. de Sales, J. Finley, A. Fox, S. da Silva, P. de Morais, M. Skolnick, and M. Hopkins. Microelectron. J., 34 (5-8): 747-749 (2003)

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Disambiguation of "Skolnick, M. S."

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Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devices

Please choose a person to relate this publication to

M S Perzanowski

M S Khan

M S Jenny

Rahul M S

Osman M s rl

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Skolnick, M. S."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devices

Please choose a person to relate this publication to

M S Perzanowski

M S Khan

M S Jenny

Rahul M S

Osman M s rl

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devices