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High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs.

, , , , , , , , , , , , , , and . DRC, page 251-252. IEEE, (2019)

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A novel CMOS compatible embedded nonvolatile memory with zero process adder., , , , and . MTDT, page 9-12. IEEE Computer Society, (2005)Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications., , , , , , , , , and 3 other author(s). IRPS, page 2. IEEE, (2015)Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies., , , , , , , , , and 9 other author(s). IRPS, page 6. IEEE, (2018)The seismoacoustic wavefield: A new paradigm in studying geophysical phenomena, , , and . Reviews of Geophysics, 48 (4): RG4003+ (Dec 4, 2010)Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications., , , , , , , , , and 1 other author(s). IRPS, page 1-5. IEEE, (2020)Optimized LDMOS Offering for Power Management and RF Applications., , , , , , , , , and 5 other author(s). IRPS, page 57-1. IEEE, (2022)UAV-Based Quantification of Dynamic Lahar Channel Morphology at Volcán de Fuego, Guatemala., , , , and . Remote. Sens., 15 (15): 3713 (August 2023)Product applications and technology directions with SiGe BiCMOS., , , , , , , , , and 10 other author(s). IEEE J. Solid State Circuits, 38 (9): 1471-1478 (2003)Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs., , , , , , , , , and 1 other author(s). IRPS, page 1-6. IEEE, (2019)High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs., , , , , , , , , and 5 other author(s). DRC, page 251-252. IEEE, (2019)