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Multi Level Cell Reliability in Ge-rich GeSbTe-based Phase Change Memory Arrays., , , , , , , , and . IRPS, page 1-5. IEEE, (2023)Outils pour calculer l'empreinte TIC des organisations : adaptation d'une étude européenne., , , and . INFORSID, page 37-38. (2023)Frequency modulation of conductance level in PCM device for neuromorphic applications., , , , , , , , , and . ESSCIRC, page 129-132. IEEE, (2022)Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement., , , , , , , , , and 6 other author(s). ESSDERC, page 225-228. IEEE, (2022)Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction., , , , , , , , , and 3 other author(s). ESSDERC, page 233-236. IEEE, (2022)OTS selector devices: Material engineering for switching performance., , , , , , , , and . ICICDT, page 113-116. IEEE, (2018)Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance., , , , , , , , , and 7 other author(s). IMW, page 1-4. IEEE, (2021)Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate., , , , , , , , , and 7 other author(s). IMW, page 1-4. IEEE, (2022)Tools for Calculating the ICT Footprint of Organisations: Adaptation of a European Study., , , and . EMCIS, volume 464 of Lecture Notes in Business Information Processing, page 277-290. Springer, (2022)Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks., , , , , , , , , and . ICECS, page 561-564. IEEE, (2018)