We analyzed possibility to increase density of elements of integrated circuits. We illustrate the possibility
by example of manufacturing of a circuit XOR. Framework the paper we consider a heterostructure which
includes into itself a substrate and an epitaxial layer with specific configuration. Several required areas of
the heterostructure have been doped by diffusion and/or ion implantation. After that we consider optimized
annealing of dopant and/or radiation defects
E. E.L. Pankratov. International Journal of Recent advances in Physics (IJRAP), 5 (1):
1-18(02/2016 2016)
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