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Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules., , , , , and . IEEE Trans. Ind. Electron., 63 (2): 849-863 (2016)Bias temperature instability and condition monitoring in SiC power MOSFETs., and . Microelectron. Reliab., (2018)Evaluation of the impact of the physical dimensions and material of the semiconductor chip on the reliability of Sn3.5Ag solder interconnect in power electronic module: A finite element analysis perspective., , , , and . Microelectron. Reliab., (2017)Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs., , and . IRPS, page 1-10. IEEE, (2020)Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs., , , and . IEEE Trans. Ind. Electron., 67 (9): 7375-7385 (2020)Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs., and . Microelectron. Reliab., (2017)Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET., , , , , and . IECON, page 1-6. IEEE, (2021)Evaluation of SiC Schottky Diodes Using Pressure Contacts., , , , , , , and . IEEE Trans. Ind. Electron., 64 (10): 8213-8223 (2017)Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS., , , , , , and . IEEE Trans. Ind. Electron., 63 (4): 2092-2102 (2016)Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules., , , , , and . Microelectron. Reliab., (2016)