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Impact of mechanical strain on wakeup of HfO2 ferroelectric memory., , , , , , , , and . IRPS, page 1-6. IEEE, (2021)New Insights into the Imprint Effect in FE-HfO2 and its Recovery., , , , , , , , , and 3 other author(s). IRPS, page 1-7. IEEE, (2019)Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering., , , , , , , , , and . IMW, page 1-4. IEEE, (2023)A comprehensive variability study of doped HfO2 FeFET for memory applications., , , , , , , , and . IMW, page 1-4. IEEE, (2022)Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications., , , , , , , , , and 5 other author(s). VLSI Circuits, page 1-2. IEEE, (2021)Breakdown investigation in GaN-based MIS-HEMT devices., , , , , , , , , and 2 other author(s). ESSDERC, page 377-380. IEEE, (2014)Understanding the memory window in 1T-FeFET memories: a depolarization field perspective., , , , , , , and . IMW, page 1-4. IEEE, (2021)Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test., , , , , and . Microelectron. Reliab., 49 (9-11): 1207-1210 (2009)