Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

First Demonstration of High-Sensitivity (NEP 1fW1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors.

Y. Qin, C. Lu, Z. Yu, Z. Yao, F. Wu, D. Dong, X. Zhao, G. Xu, Y. Zhang, S. Long, L. Li, and M. Liu. VLSI Technology and Circuits, page 345-346. IEEE, (2022)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Lu Lu

Chison Lu

Baufa Lu

Qianhao Lu

Jing Lu

Other publications of authors with the same name

Bulk-Like Electrical Properties Induced by Contact-Limited Charge Transport in Organic Diodes: Revised Space Charge Limited CurrentG. Xu, N. Gao, C. Lu, W. Wang, Z. Ji, C. Bi, Z. Han, N. Lu, G. Yang, Y. Li and 1 other author(s). Advanced Electronic Materials, 4 (5): 1700493 (2018)A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism.L. Li, W. Ba, W. Wang, L. Li, G. Xu, L. Wang, Z. Ji, C. Lu, and W. Banerjee. Microelectron. J., (2019)First Demonstration of High-Sensitivity (NEP 1fW1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors.Y. Qin, C. Lu, Z. Yu, Z. Yao, F. Wu, D. Dong, X. Zhao, G. Xu, Y. Zhang, S. Long and 2 other author(s). VLSI Technology and Circuits, page 345-346. IEEE, (2022)Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm, max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec.K. Chen, J. Niu, G. Yang, M. Liu, W. Lu, F. Liao, K. Huang, X. Duan, C. Lu, J. Wang and 8 other author(s). VLSI Technology and Circuits, page 298-299. IEEE, (2022)Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application.K. Huang, X. Duan, J. Feng, Y. Sun, C. Lu, C. Chen, G. Jiao, X. Lin, J. Shao, S. Yin and 14 other author(s). VLSI Technology and Circuits, page 296-297. IEEE, (2022)

BibSonomy

Disambiguation of "Lu, Congyan"