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Другие публикации лиц с тем же именем

Insight Into HCI Reliability on I/O Nitrided Devices., , , , , , , , , и 2 other автор(ы). IRPS, стр. 1-5. IEEE, (2023)40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications., , , , , , , , , и 16 other автор(ы). ESSDERC, стр. 101-104. IEEE, (2023)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions., , , , , и . Microelectron. Reliab., 41 (9-10): 1295-1300 (2001)High voltage devices in advanced CMOS technologies., , , , и . CICC, стр. 363-370. IEEE, (2009)New insights into the change of voltage acceleration and temperature activation of oxide breakdown., , , , и . Microelectron. Reliab., 43 (8): 1211-1214 (2003)Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement., , , и . Microelectron. Reliab., 42 (9-11): 1497-1500 (2002)Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides., , , , , , и . Microelectron. Reliab., 45 (12): 1842-1854 (2005)Failures in ultrathin oxides: Stored energy or carrier energy driven?, , , , и . Microelectron. Reliab., 41 (9-10): 1367-1372 (2001)Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications., , , , , , и . IRPS, стр. 1-8. IEEE, (2023)Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides., , , и . Microelectron. Reliab., 41 (7): 1035-1039 (2001)