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350 GHz targeting sub-6 GHz and mmW 5G applications.

S. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, T. de Albuquerque, F. Monsieur, H. Audouin, C. Legrand, C. Diouf, J. Goncalves, C. Goncalves, C. Durand, N. Vulliet, L. Berthier, E. Souchier, P. Garcia, S. Jan, M. Hello, M. Rellier, P. Scheer, B. Duriez, X. Garros, T. Bordignon, F. Paillardet, and P. Chevalier. ESSDERC, page 101-104. IEEE, (2023)

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Frederic Hilkenmeier

Frédéric Roux

Frederic Orde

Frederic Folwaczny

Frédéric Ruckert

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Insight Into HCI Reliability on I/O Nitrided Devices.C. Doyen, V. Yon, X. Garros, L. Basset, T. Frutuoso, C. Dagon, C. Diouf, X. Federspiel, V. Millon, F. Monsieur and 2 other author(s). IRPS, page 1-5. IEEE, (2023)40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications.S. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, T. de Albuquerque, F. Monsieur, H. Audouin, C. Legrand, C. Diouf and 16 other author(s). ESSDERC, page 101-104. IEEE, (2023)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, and G. Ghibaudo. Microelectron. Reliab., 41 (9-10): 1295-1300 (2001)New insights into the change of voltage acceleration and temperature activation of oxide breakdown.G. Ribes, S. Bruyère, F. Monsieur, D. Roy, and V. Huard. Microelectron. Reliab., 43 (8): 1211-1214 (2003)High voltage devices in advanced CMOS technologies.R. Bianchi, C. Raynaud, F. Blanchet, F. Monsieur, and O. Noblanc. CICC, page 363-370. IEEE, (2009)Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications.T. Garba-Seybou, X. Federspiel, F. Monsieur, M. Sicre, F. Cacho, J. Hai, and A. Bravaix. IRPS, page 1-8. IEEE, (2023)Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.D. Roy, S. Bruyère, E. Vincent, and F. Monsieur. Microelectron. Reliab., 42 (9-11): 1497-1500 (2002)Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, and G. Ghibaudo. Microelectron. Reliab., 45 (12): 1842-1854 (2005)Failures in ultrathin oxides: Stored energy or carrier energy driven?S. Bruyère, F. Monsieur, D. Roy, E. Vincent, and G. Ghibaudo. Microelectron. Reliab., 41 (9-10): 1367-1372 (2001)Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.F. Monsieur, E. Vincent, G. Pananakakis, and G. Ghibaudo. Microelectron. Reliab., 41 (7): 1035-1039 (2001)

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Disambiguation of "Monsieur, Frederic"

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40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications.

Please choose a person to relate this publication to

Frederic Hilkenmeier

Frédéric Roux

Frederic Orde

Frederic Folwaczny

Frédéric Ruckert

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Monsieur, Frederic"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML 40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications.

Please choose a person to relate this publication to

Frederic Hilkenmeier

Frédéric Roux

Frederic Orde

Frederic Folwaczny

Frédéric Ruckert

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications.