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A Physics-based Model for Long Term Data Retention Characteristics in 3D NAND Flash Memory., , and . IRPS, page 1-6. IEEE, (2023)Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs., , , , , , and . IRPS, page 1-8. IEEE, (2021)Hot Carrier Degradation in Cryo-CMOS., , , and . IRPS, page 1-5. IEEE, (2020)Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions., , , , , , , , , and 4 other author(s). IRPS, page 1-5. IEEE, (2024)A comprehensive modeling framework for gate stack process dependence of DC and AC NBTI in SiON and HKMG p-MOSFETs., , , , and . Microelectron. Reliab., 54 (3): 491-519 (2014)Prediction of NBTI stress and recovery time kinetics in Si capped SiGe p-MOSFETs., and . IRPS, page 5-1. IEEE, (2018)Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI., , , and . IRPS, page 1-7. IEEE, (2021)Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD Stress., , and . IRPS, page 56-1. IEEE, (2022)Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs., , , , , and . IRPS, page 1-6. IEEE, (2020)Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet Technology., , , , , , , , , and . IRPS, page 7. IEEE, (2024)