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Recent Advances in III-V Electronics., , , , , , and . CICC, page 687-690. IEEE, (2006)InP DHBT circuits: From device physics to 40Gb/s and 100Gb/s transmission system experiments., , , , , , , , , and 7 other author(s). Bell Labs Tech. J., 14 (3): 43-62 (2009)SiGe differential transimpedance amplifier with 50-GHz bandwidth., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 38 (9): 1512-1517 (2003)Resonant Tunneling Diode- Based THz SWIPT for Microscopic 6G loT Devices., , , , , and . GLOBECOM (Workshops), page 552-557. IEEE, (2023)Rate-Power Tradeoff in THz SWIPT Systems Employing Resonant Tunnelling Diode-based EH Circuits., , , , , and . CoRR, (2023)Achievable Rate-Power Tradeoff in THz SWIPT Systems with Resonant Tunnelling Diodes., , , , , and . CoRR, (2023)High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 Vpp) output swing at 40 Gb/s., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 39 (10): 1697-1705 (2004)An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth., , , , , , , , , and 4 other author(s). IEEE J. Solid State Circuits, 39 (10): 1720-1723 (2004)