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s Write Rate.

Y. Li, S. Lee, Y. Fong, F. Pan, T. Kuo, J. Park, T. Samaddar, H. Nguyen, M. Mui, K. Htoo, T. Kamei, M. Higashitani, E. Yero, G. Kwon, P. Kliza, J. Wan, T. Kaneko, H. Maejima, H. Shiga, M. Hamada, N. Fujita, K. Kanebako, E. Tam, A. Koh, I. Lu, C. Kuo, T. Pham, J. Huynh, Q. Nguyen, H. Chibvongodze, M. Watanabe, K. Oowada, G. Shah, B. Woo, R. Gao, J. Chan, J. Lan, P. Hong, L. Peng, D. Das, D. Ghosh, V. Kalluru, S. Kulkarni, R. Cernea, S. Huynh, D. Pantelakis, C. Wang, and K. Quader. ISSCC, page 506-507. IEEE, (2008)

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A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm.R. Cernea, L. Pham, F. Moogat, S. Chan, B. Le, Y. Li, S. Tsao, T. Tseng, K. Nguyen, J. Li and 33 other author(s). ISSCC, page 420-421. IEEE, (2008)A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate.Y. Li, S. Lee, Y. Fong, F. Pan, T. Kuo, J. Park, T. Samaddar, H. Nguyen, M. Mui, K. Htoo and 38 other author(s). IEEE J. Solid State Circuits, 44 (1): 195-207 (2009)Coarse-to-Fine Sparse Sequential Recommendation.J. Li, T. Zhao, J. Li, J. Chan, C. Faloutsos, G. Karypis, S. Pantel, and J. McAuley. SIGIR, page 2082-2086. ACM, (2022)Searching Off-line Arabic Documents.J. Chan, C. Ziftci, and D. Forsyth. CVPR (2), page 1455-1462. IEEE Computer Society, (2006)Learning to Personalize Recommendation based on Customers' Shopping Intents.X. Shen, J. Shi, S. Yoon, J. Katzur, H. Wang, J. Chan, and J. Li. CoRR, (2023)AmpSum: Adaptive Multiple-Product Summarization towards Improving Recommendation Captions.Q. Truong, T. Zhao, C. Yuan, J. Li, J. Chan, S. Pantel, and H. Lauw. WWW, page 2978-2988. ACM, (2022)A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology.R. Cernea, L. Pham, F. Moogat, S. Chan, B. Le, Y. Li, S. Tsao, T. Tseng, K. Nguyen, J. Li and 33 other author(s). IEEE J. Solid State Circuits, 44 (1): 186-194 (2009)EX3: Explainable Attribute-aware Item-set Recommendations.Y. Xian, T. Zhao, J. Li, J. Chan, A. Kan, J. Ma, X. Dong, C. Faloutsos, G. Karypis, S. Muthukrishnan and 1 other author(s). RecSys, page 484-494. ACM, (2021)A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate.Y. Li, S. Lee, Y. Fong, F. Pan, T. Kuo, J. Park, T. Samaddar, H. Nguyen, M. Mui, K. Htoo and 38 other author(s). ISSCC, page 506-507. IEEE, (2008)Deterministic simulation of PRAMs on hypercube networks without look-up tables.T. Heywood, A. Ghafoor, and J. Chan. SPDP, page 195-198. IEEE Computer Society, (1990)

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A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate.

Please choose a person to relate this publication to

jim halo

Jim Wilenius

Jim Kallarackal

Jim Tsen

Jim Grundy

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Chan, Jim"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate.

Please choose a person to relate this publication to

jim halo

Jim Wilenius

Jim Kallarackal

Jim Tsen

Jim Grundy

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate.