From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells., , , , и . ASICON, стр. 1-3. IEEE, (2019)A snapback-free RC-LIGBT with separated LIGBT and FWD., , , , и . IEICE Electron. Express, 19 (17): 20220300 (2022)SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS., , , , , , и . ISCAS, стр. 1-5. IEEE, (2024)Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells., , , , и . ASICON, стр. 219-221. IEEE, (2017)System Analysis and PHM Methods for Power Devices Based on Physics-of-Failure., , , , , и . DSA, стр. 92-97. IEEE, (2017)A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO2 layer., , , , , , и . IEICE Electron. Express, 16 (19): 20190445 (2019)The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-6. IEEE, (2023)Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET., , , , , , , , и . IRPS, стр. 1-5. IEEE, (2023)A new full current mode sense amplifier with compensation circuit., , , и . ASICON, стр. 645-648. IEEE, (2011)Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism., , , , и . Comput. Phys. Commun., (2024)