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A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology.

, , , , , and . IEICE Electron. Express, 15 (23): 20180946 (2018)

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An Improved InP HEMT Small Signal Model with RC Network., , , , and . ASICON, page 1-4. IEEE, (2019)The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors., , , , and . Microelectron. Reliab., 52 (12): 2941-2947 (2012)The Study on Fabrication and Characterization of Al0.2In0.8Sb/InAs0.4Sb0.6 Heterostructures by Molecular Beam Epitaxy., , , , , and . IEEE Access, (2019)Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process., , , and . Sensors, 22 (2): 504 (2022)A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology., , , , , and . IEICE Electron. Express, 15 (23): 20180946 (2018)A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter., , , , and . IEEE Access, (2020)Characteristics of A Novel Quaternary Tunneling Field-Effect Transistor for Low Power Applicaitons., , , , , and . ICTA, page 47-48. IEEE, (2021)Analysis and Design of a Broadband Frequency Divider Using Modified Active Loads in GaAs HBT., , , , and . Journal of Circuits, Systems, and Computers, 27 (3): 1850039:1-1850039:13 (2018)Improved empirical DC I-V model for 4H-SiC MESFETs., , , , , , and . Sci. China Ser. F Inf. Sci., 51 (8): 1184-1192 (2008)