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Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V.

Y. Liu, Y. Chen, Y. Chen, H. Lin, W. Hsieh, C. Tu, B. Huang, W. Chen, C. Cheng, S. Chueh, and C. Liu. VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Jier Niu

Sara Sheehan

Jeffry Sheel

David Sheeren

Mary Sheeran

Other publications of authors with the same name

Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies.C. Tsai, C. Cheng, B. Huang, H. Lin, T. Chou, C. Tu, Y. Liu, S. Jan, Y. Chen, W. Hsieh and 3 other author(s). VLSI Technology and Circuits, page 401-402. IEEE, (2022)First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles.Y. Chen, Y. Liu, Z. Zhao, W. Hsieh, J. Lee, C. Tu, B. Huang, J. Wang, S. Chueh, Y. Xing and 5 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Extremely High-κ Hf0.2Zr0.8O2 Gate Stacks Integrated into Ge0.95Si0.05 Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at VOV=VDS=0.5V.Y. Liu, Y. Chen, Y. Chen, H. Lin, W. Hsieh, C. Tu, B. Huang, W. Chen, C. Cheng, S. Chueh and 1 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Disambiguation of "Chueh, Shee-Jier"