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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology.

, , , , , and . IEEE J. Solid State Circuits, 54 (11): 3203-3214 (2019)

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7.4 A 256×128 3D-Stacked (45nm) SPAD FLASH LiDAR with 7-Level Coincidence Detection and Progressive Gating for 100m Range and 10klux Background Light., , , , , , and . ISSCC, page 111-113. IEEE, (2021)A CMOS continuous variable gain low-noise amplifier(LNA) for WLAN applications., and . SBCCI, page 5-10. ACM, (2011)A 0.034mm2, 725fs RMS jitter, 1.8%/V frequency-pushing, 10.8-19.3GHz transformer-based fractional-N all-digital PLL in 10nm FinFET CMOS., , , , , , , , , and 3 other author(s). VLSI Circuits, page 1-2. IEEE, (2016)A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology., , , , , and . IEEE J. Solid State Circuits, 54 (11): 3203-3214 (2019)A Compact Transformer-Based Fractional-N ADPLL in 10-nm FinFET CMOS., , , , , , , , , and 2 other author(s). IEEE Trans. Circuits Syst. I Regul. Pap., 68 (5): 1881-1891 (2021)Mutually Coupled Time-to-Digital Converters (TDCs) for Direct Time-of-Flight (dTOF) Image Sensors ‡., , and . Sensors, 18 (10): 3413 (2018)A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression., , , , , and . ISSCC, page 96-98. IEEE, (2018)