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A process compensated gain cell embedded-DRAM for ultra-low-power variation-aware design.

, , , , and . ISCAS, page 1006-1009. IEEE, (2016)

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Improved Read Access in GC-eDRAM Memory by Dual-Negative Word-Line Technique., , , and . ISCAS, page 1-5. IEEE, (2020)A process compensated gain cell embedded-DRAM for ultra-low-power variation-aware design., , , , and . ISCAS, page 1006-1009. IEEE, (2016)4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes., , , , and . ISCAS, page 2177-2180. IEEE, (2014)Replica Technique for Adaptive Refresh Timing of Gain-Cell-Embedded DRAM., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 61-II (4): 259-263 (2014)Area and Energy-Efficient Complementary Dual-Modular Redundancy Dynamic Memory for Space Applications., , and . IEEE Trans. Very Large Scale Integr. Syst., 25 (2): 502-509 (2017)Ultra miniature offset cancelled bandgap reference with ±0.534% inaccuracy from -10°C to 110°C., , and . ISCAS, page 1-4. IEEE, (2017)Power Analysis Resilient SRAM Design Implemented with a 1% Area Overhead Impedance Randomization Unit for Security Applications., , , , , , , and . ESSCIRC, page 69-72. IEEE, (2019)Live Demonstration: An 800 Mhz Gain-Cell Embedded DRAM in 28 nm CMOS Bulk Process for Approximate Computing Applications., , , , , and . ISCAS, page 1-. IEEE, (2018)Lupulus: A Flexible Hardware Accelerator for Neural Networks., , , and . ICASSP, page 1608-1612. IEEE, (2020)Low-Cost Side-Channel Secure Standard 6T-SRAM-Based Memory With a 1% Area and Less Than 5% Latency and Power Overheads., , , , , , , , and . IEEE Access, (2021)