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PEALD Ru/RuOx films for ULSI applications and its transition control between metal and metal oxide., , , and . ASICON, page 1-4. IEEE, (2013)Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories, , , , , , , , , and 1 other author(s). Nature materials, 17 (1): 49 (2018)A Physically Unclonable Function with BER < 0.35% for Secure Chip Authentication Using Write Speed Variation of RRAM., , , , , , , and . ESSDERC, page 54-57. IEEE, (2018)An ultra-low power robust CMOS temperature sensor with an inaccuracy of ±0.7°C from -40°C to 85°C., , , , and . IEICE Electron. Express, 16 (16): 20190381 (2019)Margin borrowing, stock returns, and market volatility: Evidence from margin credit balance, , and . Economics Letters, 87 (2): 273--278 (May 2005)A new device architecture based on two dimensional van der Waals heterostructures., , , , and . ASICON, page 674-677. IEEE, (2017)A process optimization method for carrier stored trench bipolar transistor (CSTBT) device., , , , and . ASICON, page 1-4. IEEE, (2021)Neuromorphic Engineering for Hardware Computational Acceleration and Biomimetic Perception Motion Integration., , , , and . Adv. Intell. Syst., 2 (11): 2000124 (2020)A Low Cost Self-Adaptive Screening Method Based on Automatic Test Equipment for Low Dropout Voltage Regulators in Mass Production., and . IEEE Access, (2023)A pn-Coupled Superjunction IGBT for High Switching Speed., , , , and . ASICON, page 1-4. IEEE, (2019)