From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Power Grids Analysis in Compressed Krylov-Subspace Methods., , , и . Journal of Circuits, Systems, and Computers, 17 (3): 439-446 (2008)A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology., , , , , и . IEICE Electron. Express, 15 (23): 20180946 (2018)Temperature-dependent DC and small signal performance of InGaAs/InP DHBT., , , , , и . Microelectron. J., (2022)Characteristics of A Novel Quaternary Tunneling Field-Effect Transistor for Low Power Applicaitons., , , , , и . ICTA, стр. 47-48. IEEE, (2021)Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes., , , , , , , , , и . IEEE Access, (2020)Thermal-Aware Fixed-Outline 3-D IC Floorplanning: An End-to-End Learning-Based Approach., , , , и . IEEE Trans. Very Large Scale Integr. Syst., 31 (12): 1882-1895 (декабря 2023)ATT-TA: A Cooperative Multiagent Deep Reinforcement Learning Approach for TSV Assignment in 3-D ICs., , , , и . IEEE Trans. Very Large Scale Integr. Syst., 31 (12): 1905-1917 (декабря 2023)Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes., , , , , , , и . ASICON, стр. 1-3. IEEE, (2015)Analytical model and optimization strategy for SiC floating junction JBS diodes., , , , , , , , и . Microelectron. J., (2023)Improved empirical DC I-V model for 4H-SiC MESFETs., , , , , , и . Sci. China Ser. F Inf. Sci., 51 (8): 1184-1192 (2008)