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The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.

M. Cui, Y. Cai, Q. Bu, W. Liu, H. Wen, I. Mitrovic, S. Taylor, P. Chalker, and C. Zhao. ICICDT, page 1-4. IEEE, (2019)

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Veselin Mitrovic

Nenad Mitrovic

Ivona Jakovljevi

Sascha Mitrovic

Veselin Mitrovic

Other publications of authors with the same name

Electrical and structural properties of hafnium silicate thin films.I. Mitrovic, O. Buiu, S. Hall, C. Bungey, T. Wagner, W. Davey, and Y. Lu. Microelectron. Reliab., 47 (4-5): 645-648 (2007)Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices.Y. Cai, Y. Wang, M. Cui, W. Liu, H. Wen, C. Zhao, I. Mitrovic, S. Taylor, and P. Chalker. ICICDT, page 1-5. IEEE, (2019)Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors.Q. Liu, C. Zhao, C. Zhao, I. Mitrovic, S. Hall, W. Xu, L. Yang, E. Lim, Q. Wang, Y. Wei and 1 other author(s). ICICDT, page 1-5. IEEE, (2019)Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication temperatures.Z. Shen, C. Zhao, C. Zhao, I. Mitrovic, L. Yang, W. Xu, E. Lim, T. Luo, and Y. Huang. ICICDT, page 1-4. IEEE, (2019)Towards rectennas for solar energy harvesting.N. Sedghi, J. Zhang, J. Ralph, Y. Huang, I. Mitrovic, and S. Hall. ESSDERC, page 131-134. IEEE, (2013)Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices.Y. Cai, Y. Wang, Y. Liang, Y. Zhang, W. Liu, H. Wen, I. Mitrovic, and C. Zhao. IEEE Access, (2020)Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors.T. Zhao, C. Zhao, I. Mitrovic, E. Lim, L. Yang, C. Qiu, and C. Zhao. IRPS, page 1-4. IEEE, (2020)Emerging Optical In-Memory Computing Sensor Synapses Based on Low-Dimensional Nanomaterials for Neuromorphic Networks.Z. Shen, C. Zhao, L. Kang, Y. Sun, Y. Liu, I. Mitrovic, L. Yang, E. Lim, Z. Zeng, and C. Zhao. Adv. Intell. Syst., (2022)Solution-processed Synaptic Transistors Utilizing MXenes as Floating Gate.T. Zhao, C. Zhao, Y. Liu, L. Yang, I. Mitrovic, E. Lim, and C. Zhao. ICICDT, page 1-4. IEEE, (2021)Water-induced Combustion-processed Metal-oxide Synaptic Transistor.Q. Liu, C. Zhao, Y. Liu, I. Mitrovic, W. Xu, L. Yang, Z. Wang, W. Wei, Y. Wu, and X. Yu. ICICDT, page 1-4. IEEE, (2021)

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Disambiguation of "Mitrovic, Ivona Z."

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URL
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The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.

Please choose a person to relate this publication to

Veselin Mitrovic

Nenad Mitrovic

Ivona Jakovljevi

Sascha Mitrovic

Veselin Mitrovic

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Mitrovic, Ivona Z."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.

Please choose a person to relate this publication to

Veselin Mitrovic

Nenad Mitrovic

Ivona Jakovljevi

Sascha Mitrovic

Veselin Mitrovic

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.