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4-Port isolated MOS modeling and extraction for mmW applications.

B. Dormieu, P. Scheer, C. Charbuillet, S. Jan, и F. Danneville. ESSCIRC, стр. 38-41. IEEE, (2012)

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Maurice Patrick Scheer

Clemens Scheer

Biosphere-atmosphere-exchange of C and N trace gases and microbial N turnover processes in irrigated agricultural systems of the Aral Sea Basin, UzbekistanC. Scheer. Uni Bonn, (2008)

Susanne Scheer

Manfred Scheer

Walter Scheer

Другие публикации лиц с тем же именем

Corrections to "Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge".D. Pino-Monroy, P. Scheer, M. Bouchoucha, C. Galup-Montoro, M. Barragán, P. Cathelin, J. Fournier, A. Cathelin, и S. Bourdel. IEEE Access, (2023)4-Port isolated MOS modeling and extraction for mmW applications.B. Dormieu, P. Scheer, C. Charbuillet, S. Jan, и F. Danneville. ESSCIRC, стр. 38-41. IEEE, (2012)Analog and RF modeling of FDSOI UTBB MOSFET using Leti-UTSOI model.S. Ghouli, P. Scheer, M. Minondo, A. Juge, T. Poiroux, J. Sallese, и C. Lallement. MIXDES, стр. 41-46. IEEE, (2016)Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge.D. Pino-Monroy, P. Scheer, M. Bouchoucha, C. Galup-Montoro, M. Barragán, P. Cathelin, J. Fournier, A. Cathelin, и S. Bourdel. IEEE Access, (2022)Design-oriented model for short-channel MOS transistors based on inversion charge.D. Pino-Monroy, P. Scheer, M. Bouchoucha, C. Galup-Montoro, M. Barragán, J. Fournier, A. Cathelin, и S. Bourdel. LASCAS, стр. 1-4. IEEE, (2023)Resistive Feedback LNA design using a 7-parameter design-oriented model for advanced technologies.M. Bouchoucha, D. Pino-Monroy, P. Scheer, P. Cathelin, J. Fournier, M. Barragán, A. Cathelin, и S. Bourdel. ISCAS, стр. 1-5. IEEE, (2023)Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs.K. Pradeep, T. Karatsori, T. Poiroux, A. Juge, P. Scheer, G. Gouget, E. Josse, и G. Ghibaudo. ESSDERC, стр. 242-245. IEEE, (2018)Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses.L. Negre, D. Roy, F. Cacho, P. Scheer, S. Jan, S. Boret, D. Gloria, и G. Ghibaudo. IEEE J. Solid State Circuits, 47 (5): 1075-1083 (2012)40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications.S. Crémer, N. Pelloux, F. Gianesello, Y. Mourier, G. Haury, T. de Albuquerque, F. Monsieur, H. Audouin, C. Legrand, C. Diouf и 16 other автор(ы). ESSDERC, стр. 101-104. IEEE, (2023)CARbridge, Reduction of System Complexity by Standardisation of the System-Basis-Chips for Automotive Applications.P. Scheer, E. Schmidt, и S. Burges. DATE, стр. 1107-1110. ACM, (2008)

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