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Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping., , , , , and . EITCE, page 1449-1454. ACM, (2021)Anti-total dose effect design of half-bridge driving chip., , , , , and . EITCE, page 76-81. ACM, (2021)3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET., , , , and . EITCE, page 1520-1525. ACM, (2021)A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers., , , , and . EITCE, page 617-622. ACM, (2022)The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode., , , , , , and . EITCE, page 1060-1064. ACM, (2020)Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer., , , , , and . EITCE, page 22-27. ACM, (2021)Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping., , , , and . EITCE, page 417-421. ACM, (2022)Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension., , , , and . EITCE, page 66-72. ACM, (2023)Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode., , , , , and . EITCE, page 1065-1069. ACM, (2020)High voltage CIBH diodes with new structure on the cathode side of the edge., , , , , and . EITCE, page 194-199. ACM, (2021)