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Gate inversion effect in Si1-xGex/HfO2/Si metal-oxide-semiconductor devices, , , , , and . APPLIED PHYSICS LETTERS, (2005)Si- and SiGe- high-k oxide nanostructures for optoelectronic devices, , , , , and . Quantum Sensing and Nanophotonic Devices II, volume 5732 of PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), page 538-546. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, SPIE, SPIE-INT SOC OPTICAL ENGINEERING, (2005)Conference on Quantum Sensing and Nanophotonic Devices II, San Jose, CA, JAN 23-27, 2005.