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A 16-Mb Toggle MRAM With Burst Modes., , , , , , , , , и 13 other автор(ы). IEEE J. Solid State Circuits, 42 (11): 2378-2385 (2007)MRAM Applications Using Unlimited Write Endurance., , , , и . IEICE Trans. Electron., 90-C (10): 1936-1940 (2007)A 90nm 12ns 32Mb 2T1MTJ MRAM., , , , , , , , , и 10 other автор(ы). ISSCC, стр. 462-463. IEEE, (2009)Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCs., , , и . IEEE J. Solid State Circuits, 44 (8): 2244-2250 (2009)Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros., , , и . IEICE Trans. Electron., 92-C (4): 417-422 (2009)Nonvolatile Magnetic Flip-Flop for standby-power-free SoCs., , , и . CICC, стр. 355-358. IEEE, (2008)10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications., , , , , , , , , и 4 other автор(ы). ISSCC, стр. 184-185. IEEE, (2014)Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs., , , , , , и . IEICE Trans. Electron., 88-C (5): 804-810 (2005)FeRAM device and circuit technologies fully compatible with advanced CMOS., , , , , , , , , и 2 other автор(ы). CICC, стр. 171-178. IEEE, (2001)A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing., , , , , , , , , и 5 other автор(ы). ISCAS, стр. 1588-1591. IEEE, (2014)