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Advances of the development of a ferroelectric field-effect transistor on Ge(001)., , , , , , , , , and 5 other author(s). ICICDT, page 1-3. IEEE, (2017)Probing stress effects in HfO2 gate stacks with time dependent measurements., , , , , , , , , and . Microelectron. Reliab., 45 (5-6): 806-810 (2005)Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric., , , and . IRPS, page 1-5. IEEE, (2019)Electrical characterization and analysis techniques for the high-kappa era., , , , , and . Microelectron. Reliab., 47 (4-5): 479-488 (2007)Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs., and . Microelectron. Reliab., (2016)Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion., , , , , and . Microelectron. Reliab., 49 (5): 495-498 (2009)Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon., , , , and . IEEE Trans. Reliab., 64 (2): 579-585 (2015)Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics., , , , , , , and . Microelectron. Reliab., 44 (9-11): 1509-1512 (2004)A novel approach to characterization of progressive breakdown in high-k/metal gate stacks., , , , , , , , and . Microelectron. Reliab., 48 (11-12): 1759-1764 (2008)Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3., , , , and . IRPS, page 1-5. IEEE, (2020)