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Interface effects in the Raman scattering of InN/AlN superlattices, , , , , and . PHYSICAL REVIEW B, (2002)Strong interface localization of phonons in nonabrupt InN/GaN superlattices, , , , and . PHYSICAL REVIEW B, (2001)High-temperature effects on the velocity overshoot of hot electrons in 6H-and 3C-SiC, , , , and . SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 14 (11): 1007-1011 (1999)Ultrafast electron drift velocity overshoot in 3C-SiC, , , , and . SOLID STATE COMMUNICATIONS, 113 (9): 539-542 (2000)Smooth interface effects on the Raman scattering in zinc-blende AlN/GaN superlattices, , , , , , and . PHYSICAL REVIEW B, 61 (19): 13060-13063 (2000)Strong interface-induced changes on the numerical calculated Raman scattering in Si/3C-SiC superlattices, , , , , , , and . APPLIED PHYSICS LETTERS, 77 (26): 4316-4318 (2000)High temperature behavior of subpicosecond electron transport transient in 3C-and 6H-SiC, , , , and . BRAZILIAN JOURNAL OF PHYSICS, 29 (4): 785-789 (1999)Terahertz complex mobility of hot electrons in 3C-and 6H-SiC at high temperature, , , , , and . JOURNAL OF APPLIED PHYSICS, 91 (8): 5208-5212 (2002)AC hot carrier transport in 3C-and 6H-SiC in the Terahertz frequency and high lattice temperature regime, , , , and . BRAZILIAN JOURNAL OF PHYSICS, 32 (2): 442-444 (2002)10th Brazillian Workshop on Semiconductor Physics (BWSP 10), GUARUJA, BRAZIL, APR 22-27, 2001.Interface effects on the vibrational properties of 3C-InN/3C-AlN superlattices, , , and . BRAZILIAN JOURNAL OF PHYSICS, 32 (2): 445-447 (2002)10th Brazillian Workshop on Semiconductor Physics (BWSP 10), GUARUJA, BRAZIL, APR 22-27, 2001.