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3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs.

J. Lee, F. Chang, K. Hsiang, P. Chen, Z. Luo, Z. Li, J. Tsai, C. Liu, and M. Lee. VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Min Lee

Min-Hi Lee

Induction and regulation of antiviral defence mechanisms through intracytoplasmic sensorsM. Lee. HU Berlin, (2009)

Jae-Min Lee

Min-Seok Lee

Min-Suk Lee

Other publications of authors with the same name

Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications.P. Chen, K. Chen, M. Tang, Z. Wang, Y. Chou, and M. Lee. Sensors, 18 (9): 2795 (2018)Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array.H. Chiang, J. Wang, K. Lin, C. Nien, J. Wu, K. Hsiang, C. Chuu, Y. Chen, X. Zhang, C. Liu and 6 other author(s). VLSI Technology and Circuits, page 361-362. IEEE, (2022)Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf1-xZrXO2 for Quantum Computing Applications.K. Hsiang, J. Lee, Z. Lou, F. Chang, Z. Li, C. Liu, T. Hou, P. Su, and M. Lee. IRPS, page 1-4. IEEE, (2023)Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory.K. Chen, C. Lo, Y. Lin, C. Chueh, C. Chang, G. Siang, Y. Tseng, Y. Yang, F. Hsieh, S. Chang and 12 other author(s). IRPS, page 1-4. IEEE, (2020)Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM.C. Liao, K. Hsiang, Z. Lou, H. Tseng, C. Lin, Z. Li, F. Hsieh, C. Wang, F. Chang, W. Ray and 4 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2022)3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 10⁹ Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs.J. Lee, F. Chang, K. Hsiang, P. Chen, Z. Luo, Z. Li, J. Tsai, C. Liu, and M. Lee. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Correlation between Access Polarization and High Endurance (~ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2.K. Hsiang, C. Liao, Y. Lin, Z. Lou, C. Lin, J. Lee, F. Chang, Z. Li, H. Tseng, C. Wang and 5 other author(s). IRPS, page 9-1. IEEE, (2022)FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations.K. Hsiang, J. Lee, F. Chang, Z. Lou, Z. Li, Z. Li, J. Chen, C. Liu, T. Hou, and M. Lee. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Impact of nanoscale polarization relaxation on endurance reliability of one-transistor hybrid memory using combined storage mechanisms.Y. Chiu, C. Chang, H. Hsu, C. Cheng, and M. Lee. IRPS, page 3. IEEE, (2015)First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles.Y. Chen, Y. Liu, Z. Zhao, W. Hsieh, J. Lee, C. Tu, B. Huang, J. Wang, S. Chueh, Y. Xing and 5 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Disambiguation of "Lee, Min-Hung"