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A 3-GHz 70-mb SRAM in 65-nm CMOS technology with integrated column-based dynamic power supply., , , , , , , , и . IEEE J. Solid State Circuits, 41 (1): 146-151 (2006)Multi-Phase 1 GHz Voltage Doubler Charge Pump in 32 nm Logic Process., , , , , , и . IEEE J. Solid State Circuits, 45 (4): 751-758 (2010)Circuit-level techniques to control gate leakage for sub-100nm CMOS., и . ISLPED, стр. 60-63. ACM, (2002)A 4.2GHz 0.3mm2 256kb Dual-Vcc SRAM Building Block in 65nm CMOS., , , , , , , , , и 3 other автор(ы). ISSCC, стр. 2572-2581. IEEE, (2006)A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management., , , , , , , , и . ISSCC, стр. 456-457. IEEE, (2009)A 1 Gb 2 GHz 128 GB/s Bandwidth Embedded DRAM in 22 nm Tri-Gate CMOS Technology., , , , , , , , , и 2 other автор(ы). IEEE J. Solid State Circuits, 50 (1): 150-157 (2015)Analysis of dual-VT SRAM cells with full-swing single-ended bit line sensing for on-chip cache., , , , , , , и . IEEE Trans. Very Large Scale Integr. Syst., 10 (2): 91-95 (2002)An offset-cancelling four-phase voltage sense amplifier for resistive memories in 14nm CMOS., , , и . CICC, стр. 1-4. IEEE, (2017)Gain-Cell CIM: Leakage and Bitline Swing Aware 2T1C Gain-Cell eDRAM Compute in Memory Design with Bitline Precharge DACs and Compact Schmitt Trigger ADCs., , , , и . VLSI Technology and Circuits, стр. 112-113. IEEE, (2022)16.2 eDRAM-CIM: Compute-In-Memory Design with Reconfigurable Embedded-Dynamic-Memory Array Realizing Adaptive Data Converters and Charge-Domain Computing., , , , , и . ISSCC, стр. 248-250. IEEE, (2021)