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Disambiguation of "Cassé, Mikaël"

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MOS technology for quantum computing: recent progress and perspectives for scaling up.

, , , , , , , , , , , , and . DRC, page 1-2. IEEE, (2021)

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Mikaël Ates

Mikaël Beauvois

Mikaël Rousson

Mikael Simons

Mikael Agopov

 

Other publications of authors with the same name

Process dependence of BTI reliability in advanced HK MG stacks., , , , , , , and . Microelectron. Reliab., 49 (9-11): 982-988 (2009)MOS technology for quantum computing: recent progress and perspectives for scaling up., , , , , , , , , and 3 other author(s). DRC, page 1-2. IEEE, (2021)Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs., , , , , , and . ESSDERC, page 73-76. IEEE, (2012)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices., , , , , , , , , and 5 other author(s). ESSDERC, page 144-147. IEEE, (2017)Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K., , , , , , , and . Microelectron. Reliab., (2017)Drain current model for short-channel triple gate junctionless nanowire transistors., , , , , , , and . Microelectron. Reliab., (2016)Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration., , , , , , , , , and 8 other author(s). VLSI Technology and Circuits, page 332-333. IEEE, (2022)Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations., , , , , , , , , and 3 other author(s). ESSDERC, page 198-201. IEEE, (2013)Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model., , , , , , , and . ESSDERC, page 210-213. IEEE, (2015)Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs., , , , , , , , , and 17 other author(s). ESSDERC, page 106-109. IEEE, (2014)