( en | de | ru )

 

Disambiguation of "Illarionov, Yury"

Author of the publication

copydeleteadd this publication to your clipboard
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.

, , , , , , , and . IRPS, page 2. IEEE, (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Ruslan Yuryev

Yury Postnikov

Yury Markovskiy

Yury Valdau

Yury Lebedev

 

Other publications of authors with the same name

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors., , , , , , , and . IRPS, page 2. IEEE, (2015)Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors., , , , , , and . ESSDERC, page 172-175. IEEE, (2015)Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study., , , , , and . ESSDERC, page 380-383. IEEE, (2022)Finding Suitable Gate Insulators for Reliable 2D FETs., , and . IRPS, page 2. IEEE, (2022)Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics., , , , , , , , , and 2 other author(s). DRC, page 1-2. IEEE, (2020)Annealing and Encapsulation of CVD-MoS2 FETs with 1010On/Off Current Ratio., , , , , , and . DRC, page 1-2. IEEE, (2018)Physical modeling of the hysteresis in M0S2 transistors., , , , , , , , , and . ESSDERC, page 284-287. IEEE, (2017)Reliability of next-generation field-effect transistors with transition metal dichalcogenides., , , , , , and . IRPS, page 5. IEEE, (2018)