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3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).

, , , , , , , , , , , , , , , , , , , , , и . ASICON, стр. 1137-1140. IEEE, (2017)

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Kenji Tsutsui

Kazuo Inoue

Kazuo Okohira

Kazuo Yajima

Kazuo Araki

 

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