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Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress., , , , , , , and . Microelectron. Reliab., 51 (9-11): 1561-1563 (2011)Digital-to-analog converters to benchmark the matching performance of a new zero-cost transistor., , , , , , , and . ISCAS, page 761-764. IEEE, (2022)A Schmitt trigger to benchmark the performance of a new zero-cost transistor., , , , , , , , and . ICECS 2022, page 1-4. IEEE, (2022)Dynamic current reduction of CMOS digital circuits through design and process optimization., , , , , , , , , and 1 other author(s). PATMOS, page 77-81. IEEE, (2015)Circuit-level evaluation of a new zero-cost transistor in an embedded non-volatile memory CMOS technology., , , , , , , , , and 1 other author(s). DTIS, page 1-5. IEEE, (2021)Dynamic power reduction through process and design optimizations on CMOS 80 nm embedded non-volatile memories technology., , , , , , , , , and 2 other author(s). MWSCAS, page 897-900. IEEE, (2014)Temperature and hump effect impact on output voltage spread of low power bandgap designed in the sub-threshold area., , , , , , and . ISCAS, page 2549-2552. IEEE, (2011)Layout optimizations to decrease internal power and area in digital CMOS standard cells., , , , , , , , and . MIPRO, page 1582-1587. IEEE, (2015)