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Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology.

P. Li, X. Wang, Y. Zhang, H. Wang, J. Lu, Q. Zhao, L. Hao, C. Peng, W. Lu, Z. Lin, and X. Wu. Microelectron. J., (November 2023)

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Chunyu Wang

Chunyu Song

Changgeng Peng

Xiao-Wei Peng

Guo Peng

Other publications of authors with the same name

A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations.C. Dai, Z. Ren, L. Guan, H. Liu, M. Gao, W. Lu, Z. Pang, C. Peng, and X. Wu. Microelectron. J., (February 2024)Design of radiation-hardened memory cell by polar design for space applications.L. Hao, L. Liu, Q. Shi, B. Qiang, Z. Li, N. Liu, C. Dai, Q. Zhao, C. Peng, W. Lu and 2 other author(s). Microelectron. J., (February 2023)An offset cancellation technique for SRAM sense amplifier based on relation of the delay and offset.Y. Zhao, J. Wang, Z. Tong, X. Wu, C. Peng, W. Lu, Q. Zhao, and Z. Lin. Microelectron. J., (2022)Soft-Error-Immune Quadruple-Node-Upset Tolerant Latch Based on Polarity Design and Source-Isolation Technologies.L. Hao, X. Zhang, C. Dai, Q. Zhao, W. Lu, C. Peng, Y. Zhou, Z. Lin, and X. Wu. IEEE Trans. Very Large Scale Integr. Syst., 32 (4): 597-608 (April 2024)Offset-Compensation High-Performance Sense Amplifier for Low-Voltage DRAM Based on Current Mirror and Switching Point.P. Huang, K. Chang, J. Ge, C. Peng, X. Wu, J. Chen, and Z. Lin. IEEE Trans. Circuits Syst. II Express Briefs, 69 (4): 2011-2015 (2022)In-Memory Multibit Multiplication Based on Bitline Shifting.J. Zhang, Z. Lin, X. Wu, Z. Tong, C. Peng, W. Lu, Q. Zhao, H. Wu, and J. Chen. IEEE Trans. Circuits Syst. II Express Briefs, 69 (2): 354-358 (2022)A high performance radiation-hardened SRAM cell based on Quatro.Y. Jia, Z. Li, and C. Peng. IEICE Electron. Express, 16 (16): 20190335 (2019)Erratum: A novel cascade control replica-bitline delay technique for reducing timing process-variation of SRAM sense amplifier IEICE Electronics Express Vol 12 (2015) No 5 pp 20150102.C. Peng, Y. Tao, W. Lu, Z. Li, X. Ji, J. Yan, and J. Chen. IEICE Electron. Express, 12 (7): 20158001 (2015)Radiation-hardened 14T SRAM cell by polar design for space applications.L. Hao, B. Qiang, C. Dai, C. Peng, W. Lu, Z. Lin, L. Liu, Q. Zhao, X. Wu, and F. Sun. IEICE Electron. Express, 20 (13): 20230083 (2023)Radiation-Hardened 14T SRAM Bitcell With Speed and Power Optimized for Space Application.C. Peng, J. Huang, C. Liu, Q. Zhao, S. Xiao, X. Wu, Z. Lin, J. Chen, and X. Zeng. IEEE Trans. Very Large Scale Integr. Syst., 27 (2): 407-415 (2019)

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Disambiguation of "Peng, Chunyu"

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Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology.

Please choose a person to relate this publication to

Chunyu Wang

Chunyu Song

Changgeng Peng

Xiao-Wei Peng

Guo Peng

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Peng, Chunyu"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology.

Please choose a person to relate this publication to

Chunyu Wang

Chunyu Song

Changgeng Peng

Xiao-Wei Peng

Guo Peng

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology.