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New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs., , , , and . BCICTS, page 1-4. IEEE, (2019)Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers., , , , , and . BCICTS, page 24-27. IEEE, (2023)Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz., , , , , , , and . BCICTS, page 145-148. IEEE, (2023)High-Power Performance of Type-II GaInAsSb/InP Uniform Absorber Uni-Traveling Carrier Photodiodes., , , , , , , , and . OFC, page 1-3. IEEE, (2023)SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design., , , , , , , , , and 3 other author(s). IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 42 (9): 3045-3052 (September 2023)InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz., , , , , and . BCICTS, page 1-4. IEEE, (2019)Iterative De-Embedding and Extracted Maximum Oscillation Frequency fMAX in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors., , , , and . BCICTS, page 110-113. IEEE, (2018)Scaling of InP/GaAsSb DHBTs: A Simultaneous fT/fMAX=463/829GHz in a 10µm Long Emitter., , , and . BCICTS, page 132-135. IEEE, (2018)Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications., , , , , , , , , and 8 other author(s). Proc. IEEE, 105 (6): 1035-1050 (2017)Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures., , , , , , , and . BCICTS, page 108-111. IEEE, (2022)