From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Very accurate high-frequency noise spectral analysis of P-channel FET's.. IEEE Trans. Instrumentation and Measurement, 47 (2): 417-422 (1998)High-voltage integrated Class-B amplifier for ultrasound transducers., , , и . ICICDT, стр. 105-108. IEEE, (2013)A 1.3 GHz low-phase noise fully tunable CMOS LC VCO., , и . IEEE J. Solid State Circuits, 35 (3): 356-361 (2000)Analysis of reliability and power efficiency in cascode class-E PAs., , , и . IEEE J. Solid State Circuits, 41 (5): 1222-1229 (2006)Analog Front End of 50-Gb/s SiGe BiCMOS Opto-Electrical Receiver in 3-D-Integrated Silicon Photonics Technology., , , , , и . IEEE J. Solid State Circuits, 57 (1): 312-322 (2022)Implementation of a CMOS LNA plus mixer for GPS applications with no external components., , , и . IEEE Trans. Very Large Scale Integr. Syst., 9 (1): 100-104 (2001)A low-voltage topology for CMOS RF mixers., , , и . IEEE Trans. Consumer Electron., 45 (2): 299-309 (1999)A Multi-Standard 1.5 to 10 Gb/s Latch-Based 3-Tap DFE Receiver With a SSC Tolerant CDR for Serial Backplane Communication., , , , , , , , , и . IEEE J. Solid State Circuits, 44 (4): 1306-1315 (2009)High-Efficiency SiGe-BiCMOS $E$ -Band Power Amplifiers Exploiting Current Clamping in the Common-Base Stage., , , и . IEEE J. Solid State Circuits, 54 (8): 2175-2185 (2019)A K-band low-noise bipolar class-C VCO for 5G backhaul systems in 55 nm BiCMOS technology., , , и . Integr., (2018)