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ReRAM write circuit with dynamic uniform and small overshoot compliance current under PVT variations.

Y. Yin, J. Gou, J. Wang, Y. Fu, X. Xue, and Y. Lin. ASICON, page 16-19. IEEE, (2017)

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Yinyin Yuan

Lin Lin

Other publications of authors with the same name

Novel RRAM programming technology for instant-on and high-security FPGAs.X. Xue, W. Jian, Y. Xie, Q. Dong, R. Yuan, and Y. Lin. ASICON, page 291-294. IEEE, (2011)Low-power high-yield SRAM design with VSS adaptive boosting and BL capacitance variation sensing.N. Liu, Y. Jiang, Q. Dong, H. Li, X. Hu, and Y. Lin. ASICON, page 1-4. IEEE, (2013)Dynamic Data-Dependent Reference to Improve Sense Margin and Speed of Magnetoresistive Random Access Memory.X. Xue, Y. Fu, Y. Zhao, J. Xu, J. Yang, Y. Xie, Y. Lin, R. Huang, Q. Zou, and J. Wu. IEEE Trans. Circuits Syst. II Express Briefs, 64-II (2): 186-190 (2017)A Logic Resistive Memory Chip for Embedded Key Storage With Physical Security.Y. Xie, X. Xue, J. Yang, Y. Lin, Q. Zou, R. Huang, and J. Wu. IEEE Trans. Circuits Syst. II Express Briefs, 63-II (4): 336-340 (2016)3D vertical RRAM architecture and operation algorithms with effective IR-drop suppressing and anti-disturbance.Y. Lin, R. Yuan, X. Xue, and B. Chen. ISCAS, page 377-380. IEEE, (2015)A small area and low power true random number generator using write speed variation of oxidebased RRAM for IoT security application.J. Yang, Y. Lin, Y. Fu, X. Xue, and B. Chen. ISCAS, page 1-4. IEEE, (2017)A low cost and high reliability true random number generator based on resistive random access memory.J. Yang, J. Xu, B. Wang, X. Xue, R. Huang, Q. Zou, J. Wu, and Y. Lin. ASICON, page 1-4. IEEE, (2015)Impacts of external magnetic field and high temperature disturbance on MRAM reliability based on FPGA test platform.K. Yang, Y. Zhao, J. Yang, X. Xue, Y. Lin, and J. Bae. ASICON, page 1-4. IEEE, (2015)A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction.X. Xue, W. Jian, J. Yang, F. Xiao, G. Chen, X. Xu, Y. Xie, Y. Lin, R. Huang, Q. Zhou and 1 other author(s). VLSIC, page 42-43. IEEE, (2012)ReRAM write circuit with dynamic uniform and small overshoot compliance current under PVT variations.Y. Yin, J. Gou, J. Wang, Y. Fu, X. Xue, and Y. Lin. ASICON, page 16-19. IEEE, (2017)

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Disambiguation of "Lin, Yinyin"

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ReRAM write circuit with dynamic uniform and small overshoot compliance current under PVT variations.

Please choose a person to relate this publication to

Yinyin Yuan

Lin Lin

Lin Lin

Lin Lin

Lin Lin

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Lin, Yinyin"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML ReRAM write circuit with dynamic uniform and small overshoot compliance current under PVT variations.

Please choose a person to relate this publication to

Yinyin Yuan

Lin Lin

Lin Lin

Lin Lin

Lin Lin

Other publications of authors with the same name

Disambiguation

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URL
DOI
BibTeX
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Chicago
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ReRAM write circuit with dynamic uniform and small overshoot compliance current under PVT variations.