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Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs.

, , , , , , and . MIXDES, page 47-51. IEEE, (2016)

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A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current., , , , and . Microelectron. J., 45 (9): 1144-1153 (2014)Improved analytical potential modeling in double-gate tunnel-FETs., , , , and . MIXDES, page 49-53. IEEE, (2014)Unified charge model for short-channel junctionless double gate MOSFETs., , , , and . MIXDES, page 75-80. IEEE, (2013)Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs., , , , , , and . MIXDES, page 47-51. IEEE, (2016)Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs., , , , , and . MIXDES, page 52-57. IEEE, (2016)Modeling and performance study of nanoscale double gate junctionless and inversion mode MOSFETs including carrier quantization effects., , , and . Microelectron. J., 45 (9): 1220-1225 (2014)Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs., , , , , , and . MIXDES, page 127-131. IEEE, (2017)3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs., , , and . ESSDERC, page 258-261. IEEE, (2014)Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation., , , , , , , , and . ESSDERC, page 456-459. IEEE, (2016)Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs., , and . MIXDES, page 210-215. IEEE, (2015)