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Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 53 (9-11): 1491-1495 (2013)Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques., , , , , , , and . Microelectron. Reliab., 53 (9-11): 1375-1380 (2013)Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices., , , , , and . Microelectron. Reliab., 42 (9-11): 1581-1585 (2002)Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques., , , , , , , and . Microelectron. Reliab., 48 (8-9): 1366-1369 (2008)Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC., , , , , , , and . Microelectron. Reliab., 47 (9-11): 1630-1633 (2007)Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 53 (9-11): 1450-1455 (2013)Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations., , , , , , , and . Microelectron. Reliab., 50 (9-11): 1520-1522 (2010)