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Signal processing challenges for emerging digital intensive and digitally assisted transceivers with deeply scaled technology (Invited).

, , , , , , , , and . SiPS, page 324-329. IEEE, (2013)

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A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS., , , , and . ISSCC, page 536-537. IEEE, (2008)An up to 36Gbps analog baseband equalizer and demodulator for mm-wave wireless communication in 28nm CMOS., , , and . CICC, page 1-4. IEEE, (2017)A CMOS IQ direct digital RF modulator with embedded RF FIR-based quantization noise filter., , , and . ESSCIRC, page 139-142. IEEE, (2011)A 54-64.8 GHz subharmonically injection-locked frequency synthesizer with transmitter EVM between -26.5 dB and -28.8 dB in 28 nm CMOS., , , , , and . ESSCIRC, page 243-246. IEEE, (2017)A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C., , , and . ESSCIRC, page 183-186. IEEE, (2014)A 6.2mW 7b 3.5GS/s time interleaved 2-stage pipelined ADC in 40nm CMOS., , , and . ESSCIRC, page 75-78. IEEE, (2014)Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications., , , , , , , and . CICC, page 49-52. IEEE, (2008)A plug-and-play wideband RF circuit ESD protection methodology: T-diodes., , , , , , , , , and . Microelectron. Reliab., 49 (12): 1440-1446 (2009)Modeling FinFET metal gate stack resistance for 14nm node and beyond., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Digital ground bounce reduction by supply current shaping and clock frequency Modulation., , , , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 24 (1): 65-76 (2005)