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Power amplifier PAE and ruggedness optimization by second-harmonic control.

, , , , and . IEEE J. Solid State Circuits, 38 (9): 1575-1583 (2003)

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High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers., , , and . ESSDERC, page 210-213. IEEE, (2013)Epitaxial growth of large-area p+n diodes at 400 ºC by Aluminum-Induced Crystallization., , , , and . ESSDERC, page 145-148. IEEE, (2012)Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 44 (9): 2322-2338 (2009)Role of junction depth in light emission from silicon p-i-n leds., , , , and . ESSDERC, page 119-122. IEEE, (2013)Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers., , and . MIPRO, page 24-29. IEEE, (2019)An experimental view on PureB silicon photodiode device physics.. MIPRO, page 1-6. IEEE, (2018)Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 41 (9): 2166-2176 (2006)Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer., , , and . MIPRO, page 64-69. IEEE, (2021)Optimization of the perimeter doping of ultrashallow p+-n--n+ photodiodes., , , and . MIPRO, page 44-48. IEEE, (2011)Reverse breakdown and light-emission patterns studied in Si PureB SPADs., , and . MIPRO, page 30-35. IEEE, (2019)