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High-voltage wordline generator for low-power program operation in NAND flash memories.

, , , , , , , , , and . A-SSCC, page 169-172. IEEE, (2011)

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A 1-Tb, 4b/Cell, 176-Stacked-WL 3D-NAND Flash Memory with Improved Read Latency and a 14.8Gb/mm2 Density., , , , , , , , , and 39 other author(s). ISSCC, page 134-135. IEEE, (2022)A High-Performance 1Tb 3b/Cell 3D-NAND Flash with a 194MB/s Write Throughput on over 300 Layers $i$., , , , , , , , , and 25 other author(s). ISSCC, page 402-403. IEEE, (2023)High-voltage wordline generator for low-power program operation in NAND flash memories., , , , , , , , , and . A-SSCC, page 169-172. IEEE, (2011)A 48nm 32Gb 8-level NAND flash memory with 5.5MB/s program throughput., , , , , , , , , and 8 other author(s). ISSCC, page 240-241. IEEE, (2009)A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOS., , , , , , , , , and 14 other author(s). ISSCC, page 446-447. IEEE, (2010)13.2 A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique., , , , , , , , , and 20 other author(s). ISSCC, page 220-221. IEEE, (2020)A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS., , , , , , , , , and 15 other author(s). IEEE J. Solid State Circuits, 46 (1): 97-106 (2011)