( en | de | ru )

 

Disambiguation of "Endo, Kazuhiko"

Author of the publication

copydeleteadd this publication to your clipboard
Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration.

, , , , , , , , , , and . ESSDERC, page 278-281. IEEE, (2014)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Kazuhiko Yoshida

Ken Endo

Yoshito Endo

Kazuhiko Yoshida

Kazuhiko Sano

 

Other publications of authors with the same name

Work-function variation induced fluctuation in bias-temperature-instability characteristics of emerging metal-gate devices and implications for digital design., , and . ICCAD, page 714-720. IEEE, (2010)Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance., , , , , , , , , and 1 other author(s). ESSDERC, page 182-185. IEEE, (2014)Advanced FinFET technologies for boosting SRAM performance.. ASICON, page 1141-1144. IEEE, (2017)PBTI for N-type tunnel FinFETs., , , , , , , , , and 4 other author(s). ICICDT, page 1-4. IEEE, (2015)Correction to Änalytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability"., , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 39 (1): 277 (2020)FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction., , , , , , , , and . IEICE Trans. Electron., 91-C (4): 534-542 (2008)0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits., , , , , , , , , and 2 other author(s). ESSCIRC, page 474-477. IEEE, (2010)Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations., , , , , , , , , and 2 other author(s). ESSDERC, page 45-48. IEEE, (2013)Realization of 0.7-V analog circuits by adaptive-Vt operation of FinFET., , , , , , , , , and 1 other author(s). CICC, page 1-4. IEEE, (2010)Analysis of charge-to-hot-carrier degradation in Ge pFinFETs., , , , and . IRPS, page 1-4. IEEE, (2020)