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2-4 GHz Q-tunable LC bandpass filter with 172-dBHz peak dynamic range, resilient to +15-dBm out-of-band blocker., and . CICC, page 1-4. IEEE, (2015)A Millimeter-Wave (40-45 GHz) 16-Element Phased-Array Transmitter in 0.18-µm SiGe BiCMOS Technology., , and . IEEE J. Solid State Circuits, 44 (5): 1498-1509 (2009)Integrated Synthetic Fourth-Order $Q$ -Enhanced Bandpass Filter With High Dynamic Range, Tunable Frequency, and Fractional Bandwidth Control., , and . IEEE J. Solid State Circuits, 54 (3): 768-784 (2019)Integrated Inverse Class-F Silicon Power Amplifiers for High Power Efficiency at Microwave and mm-Wave., and . IEEE J. Solid State Circuits, 51 (10): 2420-2434 (2016)Time Interleaved RF Carrier Modulations and Demodulations., , and . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (2): 573-586 (2014)An X- and Ku-Band 8-Element Linear Phased Array Receiver., and . CICC, page 761-764. IEEE, (2007)A high temperature wideband low noise amplifier for downhole applications., , and . ISCAS, page 938-941. IEEE, (2016)A 0.6-V, 30-GHz six-phase VCO with superharmonic coupling in 32-nm SOI CMOS technology., , and . CICC, page 1-4. IEEE, (2015)Subharmonically pumped CMOS frequency conversion (up and down) circuits for 2-GHz WCDMA direct-conversion transceiver., , , and . IEEE J. Solid State Circuits, 39 (6): 871-884 (2004)14.4 A Class F-1/F 24-to-31GHz power amplifier with 40.7% peak PAE, 15dBm OP1dB, and 50mW Psat in 0.13μm SiGe BiCMOS., and . ISSCC, page 254-255. IEEE, (2014)