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Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below., , , , , , , , , and 21 other author(s). ESSCIRC, page 88-91. IEEE, (2009)16MB High Density Embedded PCM macrocell for automotive-grade microcontroller in 28nm FD-SOI, featuring extension to 24MB for Over-The-Air software update., , , , , , , , , and 13 other author(s). VLSI Circuits, page 1-2. IEEE, (2021)Embedded PCM macro for automotive-grade microcontroller in 28nm FD-SOI., , , , , , , , , and 14 other author(s). VLSI Circuits, page 204-. IEEE, (2019)Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below., , , , , , , , , and . J. Low Power Electron., 8 (1): 125-132 (2012)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , and 2 other author(s). ESSDERC, page 246-249. IEEE, (2015)Investigation of Random Telegraph Noise in Advanced Silicon-On-Insulator N-FETs: The Impact of Back Bias, Strain, and Hot Carrier Stress., , , , , , , , , and 2 other author(s). ICICDT, page 116-119. IEEE, (2023)Static and dynamic power management in 14nm FDSOI technology., , , and . ICICDT, page 1-4. IEEE, (2015)Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs., , , , , , , , , and 17 other author(s). ESSDERC, page 106-109. IEEE, (2014)28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications., , , , , and . ESSDERC, page 7-10. IEEE, (2019)Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs., , , , , and . ICICDT, page 1-4. IEEE, (2014)