%0 Journal Article %1 journals/mr/SaitoN17 %A Saito, Wataru %A Naka, Toshiyuki %D 2017 %J Microelectron. Reliab. %K dblp %P 309-313 %T Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs. %U http://dblp.uni-trier.de/db/journals/mr/mr76.html#SaitoN17 %V 76-77

@article{journals/mr/SaitoN17, added-at = {2020-02-22T00:00:00.000+0100}, author = {Saito, Wataru and Naka, Toshiyuki}, biburl = {https://www.bibsonomy.org/bibtex/24f67792ca0d02917b9f1d7c9898bdf5c/dblp}, ee = {https://doi.org/10.1016/j.microrel.2017.07.009}, interhash = {1a90b838289f354cac640229b77cb4b6}, intrahash = {4f67792ca0d02917b9f1d7c9898bdf5c}, journal = {Microelectron. Reliab.}, keywords = {dblp}, pages = {309-313}, timestamp = {2020-02-25T13:24:46.000+0100}, title = {Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr76.html#SaitoN17}, volume = {76-77}, year = 2017 }