%0 Journal Article %1 Lee20116683 %A Lee, Seungmoo %A Won, Jaihyung %A Choi, Jongsik %A Park, Jihun %A Jee, Yeonhong %A Lee, Hyeondeok %A Byun, Dongjin %D 2011 %J Thin Solid Films %K aempl %N 20 %P 6683 - 6687 %R http://dx.doi.org/10.1016/j.tsf.2011.04.077 %T Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing %U http://www.sciencedirect.com/science/article/pii/S0040609011008935 %V 519 %X Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of \ACL\ deposited at 550 °C from \C6H12\ and \C3H6\ was 5050 Å/min and 6360 Å/min. Although the deposition rate of \ACL\ deposited from \C6H6\ was lower than that from C3H6, normalized deposition rate of \ACL\ deposited from \C6H12\ was 1.64 times higher than that from C3H6. The relative amount of hydrocarbon contents measured by \FTIR\ (Fourier transformation infrared) and \TDS\ (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of \ACLs\ deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of \ACL\ deposited at 550 °C from \C6H12\ was 0.51 and that from \C3H6\ was 0.48. The density of \ACL\ deposited at 550 °C from \C6H12\ was 1.48 g/cm3 and that from \C3H6\ was 1.45 g/cm3. The dry etching rate of \ACL\ deposited at 550 °C from \C6H12\ was 1770 Å/min and that from \C3H6\ was 1840 Å/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of \ACLs\ deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of \ACLs\ from \C6H12\ with the increase of deposition temperature was the same as those of \ACLs\ from C3H6. The high density and low dry etch rate of \ACL\ from \C6H12\ can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication.

@article{Lee20116683, abstract = {Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing process. The deposition rate of \{ACL\} deposited at 550 °C from \{C6H12\} and \{C3H6\} was 5050 Å/min and 6360 Å/min. Although the deposition rate of \{ACL\} deposited from \{C6H6\} was lower than that from C3H6, normalized deposition rate of \{ACL\} deposited from \{C6H12\} was 1.64 times higher than that from C3H6. The relative amount of hydrocarbon contents measured by \{FTIR\} (Fourier transformation infrared) and \{TDS\} (thermal desorption spectroscopy) was decreased with the increase of deposition temperature. Raman results showed that the numbers and size of graphite cluster of \{ACLs\} deposited from each source were increased with the increase of deposition temperature. The extinction coefficient of \{ACL\} deposited at 550 °C from \{C6H12\} was 0.51 and that from \{C3H6\} was 0.48. The density of \{ACL\} deposited at 550 °C from \{C6H12\} was 1.48 g/cm3 and that from \{C3H6\} was 1.45 g/cm3. The dry etching rate of \{ACL\} deposited at 550 °C from \{C6H12\} was 1770 Å/min and that from \{C3H6\} was 1840 Å/min. The deposition rate, dry etch rate and the amount of hydrocarbon contents of \{ACLs\} deposited from each carbon source were decreased with the increase of deposition temperature but extinction coefficient and density were increased with the increase of deposition temperature. We concluded that the variation behavior of the deposition characteristics and film properties of \{ACLs\} from \{C6H12\} with the increase of deposition temperature was the same as those of \{ACLs\} from C3H6. The high density and low dry etch rate of \{ACL\} from \{C6H12\} can be explained by less hydrocarbon incorporation during deposition and these properties are more favorable for the dry etch hard mask application in semiconductor device fabrication. }, added-at = {2015-10-08T06:12:59.000+0200}, author = {Lee, Seungmoo and Won, Jaihyung and Choi, Jongsik and Park, Jihun and Jee, Yeonhong and Lee, Hyeondeok and Byun, Dongjin}, biburl = {https://www.bibsonomy.org/bibtex/28268697961affdd95ac9feaa7a6d3fa9/l1th1um}, description = {Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing}, doi = {http://dx.doi.org/10.1016/j.tsf.2011.04.077}, interhash = {42a1f7b47605d7588ebf888a8c114e23}, intrahash = {8268697961affdd95ac9feaa7a6d3fa9}, issn = {0040-6090}, journal = {Thin Solid Films }, keywords = {aempl}, note = {10th Asia-Pacific Conference on Plasma Science and Technology }, number = 20, pages = {6683 - 6687}, timestamp = {2015-10-08T06:12:59.000+0200}, title = {Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing }, url = {http://www.sciencedirect.com/science/article/pii/S0040609011008935}, volume = 519, year = 2011 }