%0 Journal Article %1 journals/mr/HiranoNFGNISMY13 %A Hirano, Izumi %A Nakasaki, Yasushi %A Fukatsu, Shigeto %A Goto, Masakazu %A Nagatomo, Koji %A Inumiya, Seiji %A Sekine, Katsuyuki %A Mitani, Yuichiro %A Yamabe, Kikuo %D 2013 %J Microelectron. Reliab. %K dblp %N 12 %P 1868-1874 %T Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing. %U http://dblp.uni-trier.de/db/journals/mr/mr53.html#HiranoNFGNISMY13 %V 53

@article{journals/mr/HiranoNFGNISMY13, added-at = {2020-02-22T00:00:00.000+0100}, author = {Hirano, Izumi and Nakasaki, Yasushi and Fukatsu, Shigeto and Goto, Masakazu and Nagatomo, Koji and Inumiya, Seiji and Sekine, Katsuyuki and Mitani, Yuichiro and Yamabe, Kikuo}, biburl = {https://www.bibsonomy.org/bibtex/218523f10319802400a7a413b62ac2284/dblp}, ee = {https://doi.org/10.1016/j.microrel.2013.05.010}, interhash = {15bbb0e5937d986e442ff5dcaebbf715}, intrahash = {18523f10319802400a7a413b62ac2284}, journal = {Microelectron. Reliab.}, keywords = {dblp}, number = 12, pages = {1868-1874}, timestamp = {2020-02-25T13:25:51.000+0100}, title = {Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.}, url = {http://dblp.uni-trier.de/db/journals/mr/mr53.html#HiranoNFGNISMY13}, volume = 53, year = 2013 }